| TYPE | DESCRIPTION |
| Mfr | GE Aerospace |
| Series | SiC Power |
| Package | Bulk |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C | 425A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.45mOhm @ 425A, 20V |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
| Gate Charge (Qg) (Max) @ Vgs | 1207nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 29100pF @ 900V |
| Power - Max | 1250W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Base Product Number | GE17042 |
GE17042CCA3
トランジスタ - FET、MOSFET - アレイ
1700V 425A SiC Half-Bridge
Bulk
200
2819
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