title
  • image of パワー電界効果トランジスタ>AUIRLR3410TRL
  • image of パワー電界効果トランジスタ>AUIRLR3410TRL
  • AUIRLR3410TRL
    パワー電界効果トランジスタ
    Infineon Technologies AG
    200
    1.4646
    YES
    TYPEDESCRIPTION
    Source Content uid:AUIRLR3410TRL
    Manufacturer Part Number:AUIRLR3410TRL
    Rohs Code:Yes
    Part Life Cycle Code:Active
    Package Description:ROHS COMPLIANT, PLASTIC, DPAK-3
    Reach Compliance Code:not_compliant
    ECCN Code:EAR99
    Manufacturer:Infineon Technologies AG
    Risk Rank:0.79
    Additional Feature:AVALANCHE RATED, HIGH RELIABILITY
    Avalanche Energy Rating (Eas):150 mJ
    Case Connection:DRAIN
    Configuration:SINGLE WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min:100 V
    Drain Current-Max (Abs) (ID):17 A
    Drain Current-Max (ID):17 A
    Drain-source On Resistance-Max:0.125 Ω
    FET Technology:METAL-OXIDE SEMICONDUCTOR
    JEDEC-95 Code:TO-252AA
    JESD-30 Code:R-PSSO-G2
    JESD-609 Code:e3
    Moisture Sensitivity Level:1
    Number of Elements:1
    Number of Terminals:2
    Operating Mode:ENHANCEMENT MODE
    Operating Temperature-Max:175 °C
    Package Body Material:PLASTIC/EPOXY
    Package Shape:RECTANGULAR
    Package Style:SMALL OUTLINE
    Peak Reflow Temperature (Cel):260
    Polarity/Channel Type:N-CHANNEL
    Power Dissipation-Max (Abs):79 W
    Pulsed Drain Current-Max (IDM):60 A
    Qualification Status:Not Qualified
    Subcategory:FET General Purpose Power
    Surface Mount:YES
    Terminal Finish:Matte Tin (Sn) - with Nickel (Ni) barrier
    Terminal Form:GULL WING
    Terminal Position:SINGLE
    Time@Peak Reflow Temperature-Max (s):30
    Transistor Application:SWITCHING
    Transistor Element Material:SILICON