title
  • image of パワー電界効果トランジスタ>CSD17313Q2
  • image of パワー電界効果トランジスタ>CSD17313Q2
  • CSD17313Q2
    パワー電界効果トランジスタ
    Texas Instruments
    200
    0.3057
    YES
    TYPEDESCRIPTION
    Source Content uid:CSD17313Q2
    Manufacturer Part Number:CSD17313Q2
    Brand Name:Texas Instruments
    Pbfree Code:Yes
    Rohs Code:Yes
    Part Life Cycle Code:Active
    Package Description:SMALL OUTLINE, S-PDSO-N6
    Pin Count:8
    Reach Compliance Code:compliant
    ECCN Code:EAR99
    HTS Code:8541.29.00.95
    Manufacturer:Texas Instruments
    Risk Rank:0.84
    Avalanche Energy Rating (Eas):18 mJ
    Case Connection:DRAIN
    Configuration:SINGLE WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min:30 V
    Drain Current-Max (Abs) (ID):5 A
    Drain Current-Max (ID):5 A
    Drain-source On Resistance-Max:0.042 Ω
    FET Technology:METAL-OXIDE SEMICONDUCTOR
    Feedback Cap-Max (Crss):17 pF
    JESD-30 Code:R-PDSO-N8
    JESD-609 Code:e4
    Moisture Sensitivity Level:1
    Number of Elements:1
    Number of Terminals:8
    Operating Mode:ENHANCEMENT MODE
    Operating Temperature-Max:150 °C
    Operating Temperature-Min:-55 °C
    Package Body Material:PLASTIC/EPOXY
    Package Shape:RECTANGULAR
    Package Style:SMALL OUTLINE
    Peak Reflow Temperature (Cel):260
    Polarity/Channel Type:N-CHANNEL
    Power Dissipation-Max (Abs):17 W
    Pulsed Drain Current-Max (IDM):20 A
    Qualification Status:Not Qualified
    Subcategory:FET General Purpose Powers
    Surface Mount:YES
    Terminal Finish:Nickel/Palladium/Gold (Ni/Pd/Au)
    Terminal Form:NO LEAD
    Terminal Position:DUAL
    Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
    Transistor Application:SWITCHING
    Transistor Element Material:SILICON