| TYPE | DESCRIPTION |
| Source Content uid: | 2N7000-G |
| Manufacturer Part Number: | 2N7000-G |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Active |
| Package Description: | GREEN PACKAGE-2 |
| Reach Compliance Code: | compliant |
| ECCN Code: | EAR99 |
| HTS Code: | 8542.39.00.01 |
| Manufacturer: | Microchip Technology Inc |
| Risk Rank: | 0.76 |
| Additional Feature: | HIGH INPUT IMPEDANCE |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 60 V |
| Drain Current-Max (ID): | 0.2 A |
| Drain-source On Resistance-Max: | 5 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss): | 5 pF |
| JEDEC-95 Code: | TO-92 |
| JESD-30 Code: | O-PBCY-T3 |
| JESD-609 Code: | e3 |
| Number of Elements: | 1 |
| Number of Terminals: | 3 |
| Operating Mode: | ENHANCEMENT MODE |
| Operating Temperature-Max: | 150 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | ROUND |
| Package Style: | CYLINDRICAL |
| Peak Reflow Temperature (Cel): | NOT APPLICABLE |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 1 W |
| Qualification Status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | Matte Tin (Sn) |
| Terminal Form: | THROUGH-HOLE |
| Terminal Position: | BOTTOM |
| Time@Peak Reflow Temperature-Max (s): | NOT APPLICABLE |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
2N7000-G
小信号電界効果トランジスタ
Microchip Technology Inc
200
0.3459
YES